FCH072N60F_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCH072N60F_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 481 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 52 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.072 Ohm

Empaquetado / Estuche: TO247

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FCH072N60F_F085 Datasheet (PDF)

1.1. fch072n60f f085.pdf Size:633K _fairchild_semi

November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

1.2. fch072n60f.pdf Size:582K _fairchild_semi

December 2013 FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 65 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno

1.3. fch072n60.pdf Size:765K _fairchild_semi

August 2014 FCH072N60 N-Channel SuperFET® II MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 66 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 95 nC) and lower

1.4. fch072n60f.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCH072N60F ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Otros transistores... FQB5N90 , FQB6N80 , FCH104N60F_F085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TM_F085 , FQB8N60C , 75339P , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , FQD12N20 .

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