All MOSFET. FCH072N60F_F085 Datasheet


FCH072N60F_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH072N60F_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 481 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 52 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 160 nC

Maximum Drain-Source On-State Resistance (Rds): 0.072 Ohm

Package: TO247

FCH072N60F_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FCH072N60F_F085 Datasheet (PDF)

0.1. fch072n60f f085.pdf Size:633K _fairchild_semi


November 2014FCH072N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 m DFeatures Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,

4.1. fch072n60f.pdf Size:582K _fairchild_semi


December 2013FCH072N60FN-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 65 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techno

4.2. fch072n60f.pdf Size:212K _inchange_semiconductor


INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCH072N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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