NCEP18N10AG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP18N10AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 147.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: DFN5X6-8L

 Búsqueda de reemplazo de NCEP18N10AG MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP18N10AG datasheet

 ..1. Size:874K  ncepower
 ncep18n10ag.pdf pdf_icon

NCEP18N10AG

http //www.ncepower.com NCEP18N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AG uses Super Trench II technology that is V =100V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)

 4.1. Size:294K  ncepower
 ncep18n10ar.pdf pdf_icon

NCEP18N10AG

http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 4.2. Size:735K  ncepower
 ncep18n10ak.pdf pdf_icon

NCEP18N10AG

http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)

 4.3. Size:326K  ncepower
 ncep18n10aq.pdf pdf_icon

NCEP18N10AG

http //www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

MOSTRAR MÁS

Otros transistores... NCEP15P30A, NCEP15P30AK, NCEP15T10V, NCEP15T14LL, NCEP15T14T, NCEP15T18T, NCEP15T26LL, NCEP16N85AK, IRLZ44N, NCEP18N10AK, NCEP18N10AQ, NCEP18N10AR, NCEP2390, NCEP2390D, NCEP25N10AD, NCEP25N10AG, NCEP25N10AQ