NCEP18N10AG Datasheet and Replacement
Type Designator: NCEP18N10AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 147.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN5X6-8L
NCEP18N10AG substitution
NCEP18N10AG Datasheet (PDF)
ncep18n10ag.pdf

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
ncep18n10ar.pdf

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l
ncep18n10ak.pdf

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
ncep18n10aq.pdf

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo
Datasheet: NCEP15P30A , NCEP15P30AK , NCEP15T10V , NCEP15T14LL , NCEP15T14T , NCEP15T18T , NCEP15T26LL , NCEP16N85AK , IRFP260N , NCEP18N10AK , NCEP18N10AQ , NCEP18N10AR , NCEP2390 , NCEP2390D , NCEP25N10AD , NCEP25N10AG , NCEP25N10AQ .
Keywords - NCEP18N10AG MOSFET datasheet
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