NCEP2390D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP2390D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 230 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 63.2 nC
Tiempo de subida (tr): 26 nS
Conductancia de drenaje-sustrato (Cd): 333.1 pF
Resistencia entre drenaje y fuente RDS(on): 0.0155 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET NCEP2390D
NCEP2390D Datasheet (PDF)
ncep2390d.pdf
Pb Free Producthttp://www.ncepower.com NCEP2390DNCE N-Channel Super Trench Power MOSFET Description The NCEP2390D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep2390.pdf
Pb Free Producthttp://www.ncepower.com NCEP2390NCE N-Channel Super Trench Power MOSFET Description The NCEP2390 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep25nd10ag.pdf
http://www.ncepower.com NCEP25ND10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GS
ncep25n10ad.pdf
http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS
ncep25n10aq.pdf
http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses
ncep25n10ag.pdf
http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
ncep25n10ak.pdf
http://www.ncepower.com NCEP25N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
