NCEP2390D Datasheet. Specs and Replacement
Type Designator: NCEP2390D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 230 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 333.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: TO-263
NCEP2390D substitution
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NCEP2390D datasheet
ncep2390d.pdf
Pb Free Product http //www.ncepower.com NCEP2390D NCE N-Channel Super Trench Power MOSFET Description The NCEP2390D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep2390.pdf
Pb Free Product http //www.ncepower.com NCEP2390 NCE N-Channel Super Trench Power MOSFET Description The NCEP2390 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
ncep25nd10ag.pdf
http //www.ncepower.com NCEP25ND10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS... See More ⇒
ncep25n10ad.pdf
http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS ... See More ⇒
Detailed specifications: NCEP15T18T, NCEP15T26LL, NCEP16N85AK, NCEP18N10AG, NCEP18N10AK, NCEP18N10AQ, NCEP18N10AR, NCEP2390, IRFB4227, NCEP25N10AD, NCEP25N10AG, NCEP25N10AQ, NCEP25ND10AG, NCEP3045BGU, NCEP3045GU, NCEP3060EQ, NCEP3065BQU
Keywords - NCEP2390D MOSFET specs
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