NCEP25N10AG Todos los transistores

 

NCEP25N10AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP25N10AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 123.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEP25N10AG MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP25N10AG Datasheet (PDF)

 ..1. Size:321K  ncepower
 ncep25n10ag.pdf pdf_icon

NCEP25N10AG

http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

 4.1. Size:751K  ncepower
 ncep25n10ad.pdf pdf_icon

NCEP25N10AG

http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS

 4.2. Size:304K  ncepower
 ncep25n10aq.pdf pdf_icon

NCEP25N10AG

http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 4.3. Size:367K  ncepower
 ncep25n10ak.pdf pdf_icon

NCEP25N10AG

http://www.ncepower.com NCEP25N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

MOSTRAR MÁS

Otros transistores... NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , NCEP18N10AQ , NCEP18N10AR , NCEP2390 , NCEP2390D , NCEP25N10AD , IRFB4227 , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU , NCEP3045GU , NCEP3060EQ , NCEP3065BQU , NCEP3065QU , NCEP3085EG .

History: APM7326J | SI5513CDC | IPU78CN10N | WSF60100 | SI2305ADS | AOD4191L

 

 
Back to Top

 


 
.