All MOSFET. NCEP25N10AG Datasheet

 

NCEP25N10AG Datasheet and Replacement


   Type Designator: NCEP25N10AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 123.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: DFN5X6-8L
 

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NCEP25N10AG Datasheet (PDF)

 ..1. Size:321K  ncepower
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NCEP25N10AG

http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

 4.1. Size:751K  ncepower
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NCEP25N10AG

http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS

 4.2. Size:304K  ncepower
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NCEP25N10AG

http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 4.3. Size:367K  ncepower
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NCEP25N10AG

http://www.ncepower.com NCEP25N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

Datasheet: NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , NCEP18N10AQ , NCEP18N10AR , NCEP2390 , NCEP2390D , NCEP25N10AD , IRFB4227 , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU , NCEP3045GU , NCEP3060EQ , NCEP3065BQU , NCEP3065QU , NCEP3085EG .

History: NCEP01T18 | RU8205G

Keywords - NCEP25N10AG MOSFET datasheet

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