NCEP25N10AG Datasheet. Specs and Replacement

Type Designator: NCEP25N10AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 123.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: DFN5X6-8L

NCEP25N10AG substitution

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NCEP25N10AG datasheet

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NCEP25N10AG

http //www.ncepower.com NCEP25N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses... See More ⇒

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NCEP25N10AG

http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS ... See More ⇒

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NCEP25N10AG

http //www.ncepower.com NCEP25N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses... See More ⇒

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NCEP25N10AG

http //www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses... See More ⇒

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Detailed specifications: NCEP16N85AK, NCEP18N10AG, NCEP18N10AK, NCEP18N10AQ, NCEP18N10AR, NCEP2390, NCEP2390D, NCEP25N10AD, 10N60, NCEP25N10AQ, NCEP25ND10AG, NCEP3045BGU, NCEP3045GU, NCEP3060EQ, NCEP3065BQU, NCEP3065QU, NCEP3085EG

Keywords - NCEP25N10AG MOSFET specs

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