NCEP30T17GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP30T17GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 170 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V

Qgⓘ - Carga de la puerta: 90 nC

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: DFN5X6-8L

 Búsqueda de reemplazo de NCEP30T17GU MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP30T17GU datasheet

 ..1. Size:1031K  ncepower
 ncep30t17gu.pdf pdf_icon

NCEP30T17GU

Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 4.1. Size:366K  ncepower
 ncep30t17g.pdf pdf_icon

NCEP30T17GU

Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:361K  ncepower
 ncep30t19g.pdf pdf_icon

NCEP30T17GU

Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:366K  ncepower
 ncep30t12g.pdf pdf_icon

NCEP30T17GU

Pb Free Product http //www.ncepower.com NCEP30T12G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

MOSTRAR MÁS

Otros transistores... NCEP3065BQU, NCEP3065QU, NCEP3085EG, NCEP30P90G, NCEP30P90K, NCEP30PT16G, NCEP30T15GU, NCEP30T17G, IRF9540N, NCEP30T19G, NCEP30T21GU, NCEP30T22GU, NCEP4045GU, NCEP4060EQ, NCEP4075AGU, NCEP4075GU, NCEP4085EG