All MOSFET. NCEP30T17GU Datasheet

 

NCEP30T17GU Datasheet and Replacement


   Type Designator: NCEP30T17GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: DFN5X6-8L
 

 NCEP30T17GU substitution

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NCEP30T17GU Datasheet (PDF)

 ..1. Size:1031K  ncepower
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NCEP30T17GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 4.1. Size:366K  ncepower
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NCEP30T17GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:361K  ncepower
 ncep30t19g.pdf pdf_icon

NCEP30T17GU

Pb Free Producthttp://www.ncepower.com NCEP30T19GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:366K  ncepower
 ncep30t12g.pdf pdf_icon

NCEP30T17GU

Pb Free Producthttp://www.ncepower.com NCEP30T12GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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Datasheet: NCEP3065BQU , NCEP3065QU , NCEP3085EG , NCEP30P90G , NCEP30P90K , NCEP30PT16G , NCEP30T15GU , NCEP30T17G , IRF9540N , NCEP30T19G , NCEP30T21GU , NCEP30T22GU , NCEP4045GU , NCEP4060EQ , NCEP4075AGU , NCEP4075GU , NCEP4085EG .

Keywords - NCEP30T17GU MOSFET datasheet

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