FDMC8321LDC Datasheet. Equivalente

 ..1. Size:561K  fairchild semi
 fdmc8321ldc.pdf

December 2014 FDMC8321LDC N-Channel Power Trench MOSFET 40 V, 108 A, 2.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

 5.1. Size:263K  fairchild semi
 fdmc8321l.pdf

February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced

 7.1. Size:290K  fairchild semi
 fdmc8327l.pdf

October 2013 FDMC8327L N-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro

 8.1. Size:367K  fairchild semi
 fdmc8360l.pdf

June 2013 FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m