NCEP40P65QU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40P65QU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: DFN3.3X3.3-8L

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NCEP40P65QU datasheet

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NCEP40P65QU

http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

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 ncep40p65gu.pdf pdf_icon

NCEP40P65QU

http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

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 ncep40p60k.pdf pdf_icon

NCEP40P65QU

http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

 6.2. Size:759K  ncepower
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NCEP40P65QU

http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

MOSTRAR MÁS

Otros transistores... NCEP40P07S, NCEP40P30K, NCEP40P30Q, NCEP40P35GU, NCEP40P60G, NCEP40P60K, NCEP40P60Q, NCEP40P65GU, NCEP15T14, NCEP40P80G, NCEP40PT12K, NCEP40PT13D, NCEP40PT13GU, NCEP40PT15G, NCEP40PT30VD, NCEP40T11, NCEP40T11AG