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NCEP40P65QU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP40P65QU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L
 

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NCEP40P65QU Datasheet (PDF)

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NCEP40P65QU

http://www.ncepower.comNCEP40P65QUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

 5.1. Size:826K  ncepower
ncep40p65gu.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

 6.1. Size:661K  ncepower
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NCEP40P65QU

http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

 6.2. Size:759K  ncepower
ncep40p60g.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

Otros transistores... NCEP40P07S , NCEP40P30K , NCEP40P30Q , NCEP40P35GU , NCEP40P60G , NCEP40P60K , NCEP40P60Q , NCEP40P65GU , IRFP450 , NCEP40P80G , NCEP40PT12K , NCEP40PT13D , NCEP40PT13GU , NCEP40PT15G , NCEP40PT30VD , NCEP40T11 , NCEP40T11AG .

History: BSO201SP | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV

 

 
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