NCEP40P65QU - Аналоги. Основные параметры
Наименование производителя: NCEP40P65QU
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 660 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: DFN3.3X3.3-8L
Аналог (замена) для NCEP40P65QU
NCEP40P65QU технические параметры
ncep40p65qu.pdf
http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p65gu.pdf
http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p60k.pdf
http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
ncep40p60g.pdf
http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
Другие MOSFET... NCEP40P07S , NCEP40P30K , NCEP40P30Q , NCEP40P35GU , NCEP40P60G , NCEP40P60K , NCEP40P60Q , NCEP40P65GU , NCEP15T14 , NCEP40P80G , NCEP40PT12K , NCEP40PT13D , NCEP40PT13GU , NCEP40PT15G , NCEP40PT30VD , NCEP40T11 , NCEP40T11AG .
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