Справочник MOSFET. NCEP40P65QU

 

NCEP40P65QU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP40P65QU
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 39 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: DFN3.3X3.3-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP40P65QU Datasheet (PDF)

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 ncep40p65qu.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P65QUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

 5.1. Size:826K  ncepower
 ncep40p65gu.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

 6.1. Size:661K  ncepower
 ncep40p60k.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

 6.2. Size:759K  ncepower
 ncep40p60g.pdf pdf_icon

NCEP40P65QU

http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

ПОКАЗАТЬ ЕЩЁ

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History: HFP2N60S

 

 
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