NCEP40T11AG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40T11AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm

Encapsulados: DFN5X6-8L

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NCEP40T11AG datasheet

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NCEP40T11AG

Pb Free Product http //www.ncepower.com NCEP40T11AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP40T11AG

Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 5.1. Size:343K  ncepower
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NCEP40T11AG

http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 5.2. Size:763K  ncepower
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NCEP40T11AG

http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

MOSTRAR MÁS

Otros transistores... NCEP40P65QU, NCEP40P80G, NCEP40PT12K, NCEP40PT13D, NCEP40PT13GU, NCEP40PT15G, NCEP40PT30VD, NCEP40T11, IRFP250, NCEP40T11AK, NCEP40T11K, NCEP40T12AGU, NCEP40T12GU, NCEP40T13AGU, NCEP40T15AGU, NCEP40T15AK, NCEP40T15G