NCEP40T11AG datasheet, аналоги, основные параметры

Наименование производителя: NCEP40T11AG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.5 ns

Cossⓘ - Выходная емкость: 760 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP40T11AG

- подборⓘ MOSFET транзистора по параметрам

 

NCEP40T11AG даташит

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NCEP40T11AG

Pb Free Product http //www.ncepower.com NCEP40T11AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP40T11AG

Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

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NCEP40T11AG

http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

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NCEP40T11AG

http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

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