NCEP40T17G Todos los transistores

 

NCEP40T17G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP40T17G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 170 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 125 nC
   trⓘ - Tiempo de subida: 7.9 nS
   Cossⓘ - Capacitancia de salida: 1930 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00195 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEP40T17G Datasheet (PDF)

 ..1. Size:363K  ncepower
ncep40t17g.pdf

NCEP40T17G NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:325K  ncepower
ncep40t17a.pdf

NCEP40T17G NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.2. Size:1132K  ncepower
ncep40t17ad.pdf

NCEP40T17G NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ADNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T17AD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 5.3. Size:303K  ncepower
ncep40t17at.pdf

NCEP40T17G NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ATNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.4. Size:367K  ncepower
ncep40t17ag.pdf

NCEP40T17G NCEP40T17G

http://www.ncepower.com NCEP40T17AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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