Справочник MOSFET. NCEP40T17G

 

NCEP40T17G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP40T17G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 170 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 125 nC
   trⓘ - Время нарастания: 7.9 ns
   Cossⓘ - Выходная емкость: 1930 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00195 Ohm
   Тип корпуса: DFN5X6-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP40T17G Datasheet (PDF)

 ..1. Size:363K  ncepower
 ncep40t17g.pdf pdf_icon

NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:325K  ncepower
 ncep40t17a.pdf pdf_icon

NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.2. Size:1132K  ncepower
 ncep40t17ad.pdf pdf_icon

NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ADNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T17AD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 5.3. Size:303K  ncepower
 ncep40t17at.pdf pdf_icon

NCEP40T17G

Pb Free Producthttp://www.ncepower.com NCEP40T17ATNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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