NCEP40T20GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40T20GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 2123 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: PDFN5X6-8L

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NCEP40T20GU datasheet

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NCEP40T20GU

http //www.ncepower.com NCEP40T20GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc

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NCEP40T20GU

Pb Free Product http //www.ncepower.com NCEP40T20AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20AGU uses Super Trench technology that General Features is uniquely optimized to provide the most efficient high V =40V,I =200A DS D frequency switching performance. Both conduction and R =0.95m , typical @ V =10V DS(ON) GS switching power losses are minimized d

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NCEP40T20GU

Pb Free Product http //www.ncepower.com NCEP40T20ALL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =250A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimiz

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NCEP40T20GU

http //www.ncepower.com NCEP40T20ASL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =340A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extr

MOSTRAR MÁS

Otros transistores... NCEP40T17AG, NCEP40T17AT, NCEP40T17G, NCEP40T19GU, NCEP40T20A, NCEP40T20AGU, NCEP40T20ALL, NCEP40T20ASL, STP65NF06, NCEP40T35ALL, NCEP40T35AVD, NCEP50P80, NCEP50P80A, NCEP50P80AK, NCEP6012AS, NCEP6015AS, NCEP6016AS