All MOSFET. NCEP40T20GU Datasheet

 

NCEP40T20GU MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP40T20GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 137 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PDFN5X6-8L

 NCEP40T20GU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP40T20GU Datasheet (PDF)

 ..1. Size:778K  ncepower
 ncep40t20gu.pdf

NCEP40T20GU NCEP40T20GU

http://www.ncepower.com NCEP40T20GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 5.1. Size:732K  ncepower
 ncep40t20agu.pdf

NCEP40T20GU NCEP40T20GU

Pb Free Producthttp://www.ncepower.com NCEP40T20AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20AGU uses Super Trench technology thatGeneral Featuresis uniquely optimized to provide the most efficient high V =40V,I =200ADS Dfrequency switching performance. Both conduction andR =0.95m , typical @ V =10VDS(ON) GSswitching power losses are minimized d

 5.2. Size:734K  ncepower
 ncep40t20all.pdf

NCEP40T20GU NCEP40T20GU

Pb Free Producthttp://www.ncepower.comNCEP40T20ALLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =250ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimiz

 5.3. Size:672K  ncepower
 ncep40t20asl.pdf

NCEP40T20GU NCEP40T20GU

http://www.ncepower.comNCEP40T20ASLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =340ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extr

 5.4. Size:535K  ncepower
 ncep40t20a.pdf

NCEP40T20GU NCEP40T20GU

http://www.ncepower.comNCEP40T20ANCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NDB6030PL

 

 
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