NCEP40T20GU MOSFET Datasheet: N-Ch, 40V, 200A. Full specification with pinout and replacement list

NCEP40T20GU Specs and Replacement

   Type Designator: NCEP40T20GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PDFN5X6-8L

NCEP40T20GU substitution

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NCEP40T20GU datasheet

..1. Size:778K ncepower
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http //www.ncepower.com NCEP40T20GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒

5.1. Size:732K ncepower
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Pb Free Product http //www.ncepower.com NCEP40T20AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20AGU uses Super Trench technology that General Features is uniquely optimized to provide the most efficient high V =40V,I =200A DS D frequency switching performance. Both conduction and R =0.95m , typical @ V =10V DS(ON) GS switching power losses are minimized d... See More ⇒

5.2. Size:734K ncepower
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Pb Free Product http //www.ncepower.com NCEP40T20ALL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =250A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimiz... See More ⇒

5.3. Size:672K ncepower
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http //www.ncepower.com NCEP40T20ASL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =340A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extr... See More ⇒