NCEP50P80AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP50P80AK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 140 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 38.5 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 1155 pF
Resistencia entre drenaje y fuente RDS(on): 0.0118 Ohm
Paquete / Cubierta: TO-252
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NCEP50P80AK Datasheet (PDF)
ncep50p80ak.pdf
http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep50p80a.pdf
http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep50p80.pdf
http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
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