Справочник MOSFET. NCEP50P80AK

 

NCEP50P80AK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP50P80AK
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38.5 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 1155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0118 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

NCEP50P80AK Datasheet (PDF)

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NCEP50P80AK

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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NCEP50P80AK

http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 5.1. Size:312K  ncepower
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NCEP50P80AK

http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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