NCEP6050QU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP6050QU 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: DFN3.3X3.3-8L
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NCEP6050QU datasheet
ncep6050qu.pdf
http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6050aqu.pdf
http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low
ncep6055gu.pdf
http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6055agu.pdf
http //www.ncepower.com NCEP6055AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6055AGU uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS(ON) GS l
Otros transistores... NCEP50P80AK, NCEP6012AS, NCEP6015AS, NCEP6016AS, NCEP6035AG, NCEP6035AQU, NCEP6040AGU, NCEP6050AQU, IRFB3206, NCEP6055AGU, NCEP6055GU, NCEP6060AGU, NCEP6060GU, NCEP6080G, NCEP6090AGU, NCEP6090AK, NCEP6090D
Parámetros del MOSFET. Cómo se afectan entre sí.
History: HAT3015R | SRH03P098LMTR-G | P2202CV | IRFP264PBF | APT8043SFLLG | DH060N08D | APJ10N65P
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