NCEP6050QU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP6050QU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: DFN3.3X3.3-8L
Аналог (замена) для NCEP6050QU
NCEP6050QU Datasheet (PDF)
ncep6050qu.pdf
http://www.ncepower.com NCEP6050QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc
ncep6050aqu.pdf
http://www.ncepower.com NCEP6050AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low
ncep6055gu.pdf
http://www.ncepower.com NCEP6055GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6055GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =55ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc
ncep6055agu.pdf
http://www.ncepower.com NCEP6055AGUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP6055AGU uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.7m (typical) @ V =4.5VDS(ON) GSl
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918