NCEP6090AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP6090AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 359 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: TO-252
- Selección de transistores por parámetros
NCEP6090AK Datasheet (PDF)
ncep6090ak.pdf

http://www.ncepower.com NCEP6090AKNCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep6090agu.pdf

http://www.ncepower.com NCEP6090AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are
ncep6090gu.pdf

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low
ncep6090.pdf

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: EY4409 | SVF7N60CF | IRF7309IPBF | AFN6520S | WFY3N02 | APT904R2AN | BRD6N70
History: EY4409 | SVF7N60CF | IRF7309IPBF | AFN6520S | WFY3N02 | APT904R2AN | BRD6N70



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