Справочник MOSFET. NCEP6090AK

 

NCEP6090AK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP6090AK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 36.6 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 359 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

NCEP6090AK Datasheet (PDF)

 ..1. Size:326K  ncepower
 ncep6090ak.pdf pdf_icon

NCEP6090AK

http://www.ncepower.com NCEP6090AKNCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 5.1. Size:352K  ncepower
 ncep6090agu.pdf pdf_icon

NCEP6090AK

http://www.ncepower.com NCEP6090AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are

 6.1. Size:337K  ncepower
 ncep6090gu.pdf pdf_icon

NCEP6090AK

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

 6.2. Size:341K  ncepower
 ncep6090.pdf pdf_icon

NCEP6090AK

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

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History: NCEP18N10AR | SP8255

 

 
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