NCEP60T20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T20D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 200 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Paquete / Cubierta: TO-263
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NCEP60T20D Datasheet (PDF)
ncep60t20d.pdf

Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh
ncep60t20ll.pdf

http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep60t20t.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP6090AK , NCEP6090D , NCEP6090GU , NCEP60T12AD , NCEP60T12K , NCEP60T15AG , NCEP60T18A , NCEP60T18D , IRF640 , NCEP60T20LL , NCEP8588 , NCEP85T10G , NCEP85T15D , NCEP85T25 , NCEP85T25VD , NCEP85T30LL , NCEP85T30T .
History: QM6208S | P4404EI | FQB47P06TMAM002 | TPD65R750C | HSS3415E | BUZ83 | NVMFS4C03N
History: QM6208S | P4404EI | FQB47P06TMAM002 | TPD65R750C | HSS3415E | BUZ83 | NVMFS4C03N



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