NCEP60T20D MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP60T20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 1900 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0022 Ohm
Package: TO-263
NCEP60T20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP60T20D Datasheet (PDF)
ncep60t20d.pdf
Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh
ncep60t20ll.pdf
http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20.pdf
Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep60t20t.pdf
Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t20a.pdf
Pb Free Producthttp://www.ncepower.com NCEP60T20ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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