NCES120R062T4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCES120R062T4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 21 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TO-247-4L

 Búsqueda de reemplazo de NCES120R062T4 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCES120R062T4 datasheet

 ..1. Size:832K  ncepower
nces120r062t4.pdf pdf_icon

NCES120R062T4

PbFree Product NCES120R062T4 1200V, 26A, N-channel SiC power MOSFET General Description NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high

 5.1. Size:854K  ncepower
nces120r036t4.pdf pdf_icon

NCES120R062T4

PbFree Product NCES120R036T4 1200V, 50A, N-channel SiC power MOSFET General Description NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high

 5.2. Size:871K  ncepower
nces120r018t4.pdf pdf_icon

NCES120R062T4

PbFree Product NCES120R018T4 1200V, 81A, N-channel SiC power MOSFET General Description NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high

 7.1. Size:800K  ncepower
nces120p035t4.pdf pdf_icon

NCES120R062T4

PbFree Product NCES120P035T4 1200V, 66A, N-channel SiC power MOSFET General Description NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high

Otros transistores... NCEP85T25VD, NCEP85T30LL, NCEP85T30T, NCEP8814AS, NCEP8818AS, NCEPB302G, NCEPB303GU, NCES120R036T4, 2N7000, QM0930M3, MRF134, MRF136, MRF136Y, MRF137, MRF138, MRF140, MRF141