NCES120R062T4. Аналоги и основные параметры
Наименование производителя: NCES120R062T4
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 115 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 21 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 45 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO-247-4L
Аналог (замена) для NCES120R062T4
- подборⓘ MOSFET транзистора по параметрам
NCES120R062T4 даташит
nces120r062t4.pdf
PbFree Product NCES120R062T4 1200V, 26A, N-channel SiC power MOSFET General Description NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r036t4.pdf
PbFree Product NCES120R036T4 1200V, 50A, N-channel SiC power MOSFET General Description NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r018t4.pdf
PbFree Product NCES120R018T4 1200V, 81A, N-channel SiC power MOSFET General Description NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120p035t4.pdf
PbFree Product NCES120P035T4 1200V, 66A, N-channel SiC power MOSFET General Description NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
Другие MOSFET... NCEP85T25VD , NCEP85T30LL , NCEP85T30T , NCEP8814AS , NCEP8818AS , NCEPB302G , NCEPB303GU , NCES120R036T4 , 2N7000 , QM0930M3 , MRF134 , MRF136 , MRF136Y , MRF137 , MRF138 , MRF140 , MRF141 .
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Список транзисторов
Обновления
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