MRF140 Todos los transistores

 ..1. Size:146K  motorola
 mrf140.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T

 0.1. Size:163K  motorola
 mrf140rev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T

 0.2. Size:146K  motorola
 mrf140re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T

 9.1. Size:160K  motorola
 mrf141re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

 9.2. Size:141K  motorola
 mrf141g.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 9.3. Size:144K  motorola
 mrf148.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts

 9.4. Size:160K  motorola
 mrf141.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

 9.5. Size:141K  motorola
 mrf141gr.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 9.6. Size:143K  motorola
 mrf141grev2d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 9.7. Size:144K  motorola
 mrf148re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts

 9.8. Size:160K  motorola
 mrf141rev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

 9.9. Size:280K  macom
 mrf148a.pdf

MRF148A Linear RF Power FET M/A-COM Products Released - Rev. 062907 30W, to 175MHz, 50V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. Superior high order IMD IMD(d3) (30W PEP) 35 dB (Typ.) IMD(d11) (30W PEP) 60 dB (Typ.) Specified 50V, 30MHz characteristics Output power 30W G