MRF140 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MRF140
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 200 °C
Cossⓘ - Выходная емкость: 450 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
Тип корпуса: CASE211-11
MRF140 Datasheet (PDF)
mrf140.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
mrf140rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
mrf140re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
mrf141re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf141g.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf148.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF148/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF148Designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics30 W, to 175 MHzOutput Power = 30 Watts
mrf141.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf141gr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141grev2d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf148re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF148/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF148Designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics30 W, to 175 MHzOutput Power = 30 Watts
mrf141rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf148a.pdf
MRF148A Linear RF Power FET M/A-COM Products Released - Rev. 062907 30W, to 175MHz, 50V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. Superior high order IMD IMD(d3) (30W PEP): 35 dB (Typ.) IMD(d11) (30W PEP): 60 dB (Typ.) Specified 50V, 30MHz characteristics: Output power: 30W G
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918