MRF141 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF141

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: CASE211-11

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MRF141 datasheet

 ..1. Size:160K  motorola
 mrf141.pdf pdf_icon

MRF141

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

 0.1. Size:160K  motorola
 mrf141re.pdf pdf_icon

MRF141

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

 0.2. Size:141K  motorola
 mrf141g.pdf pdf_icon

MRF141

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 0.3. Size:141K  motorola
 mrf141gr.pdf pdf_icon

MRF141

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

MOSTRAR MÁS

Otros transistores... NCES120R062T4, QM0930M3, MRF134, MRF136, MRF136Y, MRF137, MRF138, MRF140, 2SK3878, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, MRF151, MRF151G, MRF154