MRF141. Аналоги и основные параметры
Наименование производителя: MRF141
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 420 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: CASE211-11
Аналог (замена) для MRF141
- подборⓘ MOSFET транзистора по параметрам
MRF141 даташит
mrf141.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
mrf141re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
mrf141g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
mrf141gr.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
Другие IGBT... NCES120R062T4, QM0930M3, MRF134, MRF136, MRF136Y, MRF137, MRF138, MRF140, 2SK3878, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, MRF151, MRF151G, MRF154
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Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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