MRF148
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF148
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 115
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 120
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40
V
|Id|ⓘ - Corriente continua de drenaje: 6
A
Tjⓘ - Temperatura máxima de unión: 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 35
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25
Ohm
Paquete / Cubierta: CASE211-07
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MRF148
Datasheet (PDF)
..1. Size:144K motorola
mrf148.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF148/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF148Designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics30 W, to 175 MHzOutput Power = 30 Watts
0.1. Size:144K motorola
mrf148re.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF148/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF148Designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics30 W, to 175 MHzOutput Power = 30 Watts
0.2. Size:280K macom
mrf148a.pdf 
MRF148A Linear RF Power FET M/A-COM Products Released - Rev. 062907 30W, to 175MHz, 50V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. Superior high order IMD IMD(d3) (30W PEP): 35 dB (Typ.) IMD(d11) (30W PEP): 60 dB (Typ.) Specified 50V, 30MHz characteristics: Output power: 30W G
9.1. Size:160K motorola
mrf141re.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
9.2. Size:141K motorola
mrf141g.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
9.3. Size:146K motorola
mrf140.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
9.4. Size:163K motorola
mrf140rev8.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
9.5. Size:160K motorola
mrf141.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
9.6. Size:141K motorola
mrf141gr.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
9.7. Size:146K motorola
mrf140re.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF140/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF140Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 15 dB (Typ)150 W, to 150 MHzEfficiency = 40% (T
9.8. Size:143K motorola
mrf141grev2d.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
9.9. Size:160K motorola
mrf141rev8.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
Otros transistores... MRF134
, MRF136
, MRF136Y
, MRF137
, MRF138
, MRF140
, MRF141
, MRF141G
, K4145
, MRF150
, MRF1507
, MRF1507T1
, MRF151
, MRF151G
, MRF154
, MRF156
, MRF156R
.
History: RJK0392DPA
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