MRF148 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF148
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 115 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua
de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Encapsulados: CASE211-07
Búsqueda de reemplazo de MRF148 MOSFET
- Selecciónⓘ de transistores por parámetros
MRF148 datasheet
..1. Size:144K motorola
mrf148.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts
0.1. Size:144K motorola
mrf148re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts
0.2. Size:280K macom
mrf148a.pdf
MRF148A Linear RF Power FET M/A-COM Products Released - Rev. 062907 30W, to 175MHz, 50V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. Superior high order IMD IMD(d3) (30W PEP) 35 dB (Typ.) IMD(d11) (30W PEP) 60 dB (Typ.) Specified 50V, 30MHz characteristics Output power 30W G
9.1. Size:160K motorola
mrf141re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.2. Size:141K motorola
mrf141g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.3. Size:146K motorola
mrf140.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.4. Size:163K motorola
mrf140rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.5. Size:160K motorola
mrf141.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.6. Size:141K motorola
mrf141gr.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.7. Size:146K motorola
mrf140re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.8. Size:143K motorola
mrf141grev2d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.9. Size:160K motorola
mrf141rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
Otros transistores... MRF134, MRF136, MRF136Y, MRF137, MRF138, MRF140, MRF141, MRF141G, 2N7002, MRF150, MRF1507, MRF1507T1, MRF151, MRF151G, MRF154, MRF156, MRF156R
