MRF148 - Даташиты. Аналоги. Основные параметры
Наименование производителя: MRF148
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 115
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 6
A
Tj ⓘ - Максимальная температура канала: 200
°C
Cossⓘ - Выходная емкость: 35
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.25
Ohm
Тип корпуса: CASE211-07
Аналог (замена) для MRF148
MRF148 Datasheet (PDF)
..1. Size:144K motorola
mrf148.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts
0.1. Size:144K motorola
mrf148re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF148 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 50 Volts, 30 MHz Characteristics 30 W, to 175 MHz Output Power = 30 Watts
0.2. Size:280K macom
mrf148a.pdf 

MRF148A Linear RF Power FET M/A-COM Products Released - Rev. 062907 30W, to 175MHz, 50V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. Superior high order IMD IMD(d3) (30W PEP) 35 dB (Typ.) IMD(d11) (30W PEP) 60 dB (Typ.) Specified 50V, 30MHz characteristics Output power 30W G
9.1. Size:160K motorola
mrf141re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.2. Size:141K motorola
mrf141g.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.3. Size:146K motorola
mrf140.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.4. Size:163K motorola
mrf140rev8.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.5. Size:160K motorola
mrf141.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.6. Size:141K motorola
mrf141gr.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.7. Size:146K motorola
mrf140re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF140 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to 150 MHz Efficiency = 40% (T
9.8. Size:143K motorola
mrf141grev2d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.9. Size:160K motorola
mrf141rev8.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
Другие MOSFET... MRF134
, MRF136
, MRF136Y
, MRF137
, MRF138
, MRF140
, MRF141
, MRF141G
, 2N7002
, MRF150
, MRF1507
, MRF1507T1
, MRF151
, MRF151G
, MRF154
, MRF156
, MRF156R
.