MRF157 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF157
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1350 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 125 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua
de drenaje: 60 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 750 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0625 Ohm
Encapsulados: CASE368-03
Búsqueda de reemplazo de MRF157 MOSFET
- Selecciónⓘ de transistores por parámetros
MRF157 datasheet
..1. Size:178K motorola
mrf157.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line Power Field Effect Transistor N Channel Enhancement Mode MRF157 Designed primarily for linear large signal output stages to 80 MHz. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POW
..2. Size:321K macom
mrf157.pdf
MRF157 Linear RF Power MOSFET M/A-COM Products Released - Rev. 07.07 600W, to 80MHz Product Image Designed primarily for linear large signal output stages to 80 MHz. Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 21 dB (typ.) Efficiency = 45% (typ.) 1 ADVANCED Data Sheets contain information regarding a product M/A-COM Technolo
0.1. Size:178K motorola
mrf157re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line Power Field Effect Transistor N Channel Enhancement Mode MRF157 Designed primarily for linear large signal output stages to 80 MHz. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POW
9.1. Size:156K motorola
mrf151grev8d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.2. Size:164K motorola
mrf15030.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics
9.3. Size:148K motorola
mrf151gr.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.4. Size:158K motorola
mrf15030rev7.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics
9.5. Size:173K motorola
mrf151.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.6. Size:164K motorola
mrf15060rev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.
9.7. Size:103K motorola
mrf1500.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested
9.8. Size:120K motorola
mrf156 mrf156r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF156/D Advance Information The RF MOSFET Line MRF156 RF Power Field-Effect MRF156R Transistors Motorola Preferred Device N Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz. 150 WATTS, 50 VOLTS The high power, high gain and broadband performance of this device m
9.9. Size:164K motorola
mrf15060 mrf15060s.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.
9.10. Size:93K motorola
mrf158.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line Power Field Effect Transistor MRF158 N Channel Enhancement Mode Designed for wideband large signal amplifier and oscillator applications to 500 MHz. Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Efficiency = 55% (Typical) TMOS
9.11. Size:120K motorola
mrf156re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF156/D Advance Information The RF MOSFET Line MRF156 RF Power Field-Effect MRF156R Transistors Motorola Preferred Device N Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz. 150 WATTS, 50 VOLTS The high power, high gain and broadband performance of this device m
9.12. Size:161K motorola
mrf154rev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF154 Designed primarily for linear large signal output stages in the 2.0 100 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) 600 W, 50 V, 80 MHz Eff
9.13. Size:210K motorola
mrf15090.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. 90 W, 1.5 GHz Specified 26 Volts, 1
9.14. Size:206K motorola
mrf1507 mrf1507t1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for
9.15. Size:173K motorola
mrf151re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.16. Size:206K motorola
mrf1507rev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for
9.17. Size:148K motorola
mrf151g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
9.18. Size:161K motorola
mrf154re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF154 Designed primarily for linear large signal output stages in the 2.0 100 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) 600 W, 50 V, 80 MHz Eff
9.19. Size:93K motorola
mrf158re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line Power Field Effect Transistor MRF158 N Channel Enhancement Mode Designed for wideband large signal amplifier and oscillator applications to 500 MHz. Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Efficiency = 55% (Typical) TMOS
9.20. Size:103K motorola
mrf1500r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested
9.21. Size:128K motorola
mrf150.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
9.22. Size:161K motorola
mrf154.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF154 Designed primarily for linear large signal output stages in the 2.0 100 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) 600 W, 50 V, 80 MHz Eff
9.23. Size:148K motorola
mrf150rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
9.24. Size:184K motorola
mrf151rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
9.25. Size:128K motorola
mrf150re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
9.26. Size:345K macom
mrf151.pdf
MRF151 Part Status Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V Output Power 150 W Gain 13
9.27. Size:875K macom
mrf158.pdf
MRF158 The Broadband RF TMOS Line M/A-COM Products Released - Rev. 07.07 2W, 500MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications to 500MHz N Channel enhancement mode Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.) Facilitates manual gain co
Otros transistores... MRF150, MRF1507, MRF1507T1, MRF151, MRF151G, MRF154, MRF156, MRF156R, SKD502T, MRF158, MRF160, MRF164W, MRF166, MRF166C, MRF166W, MRF171, MRF173
