MRF157 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF157/DThe RF Power MOS LinePower Field Effect TransistorNChannel Enhancement ModeMRF157Designed primarily for linear largesignal output stages to 80 MHz. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 600 WattsPower Gain = 21 dB (Typ)Efficiency = 45% (Typ)600 W, to 80 MHzMOS LINEARRF POW

MRF157 Linear RF Power MOSFET M/A-COM Products Released - Rev. 07.07 600W, to 80MHz Product Image Designed primarily for linear large signal output stages to 80 MHz. Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 21 dB (typ.) Efficiency = 45% (typ.) 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technolo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF157/DThe RF Power MOS LinePower Field Effect TransistorNChannel Enhancement ModeMRF157Designed primarily for linear largesignal output stages to 80 MHz. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 600 WattsPower Gain = 21 dB (Typ)Efficiency = 45% (Typ)600 W, to 80 MHzMOS LINEARRF POW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF156/DAdvance InformationThe RF MOSFET LineMRF156RF Power Field-EffectMRF156RTransistorsMotorola Preferred DeviceNChannel Enhancement Mode MOSFETsDesigned for broadband industrial/commercial applications up to 120 MHz.150 WATTS, 50 VOLTS The high power, high gain and broadband performance of this device m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF158/DThe RF TMOS LinePower Field Effect TransistorMRF158NChannel Enhancement ModeDesigned for wideband largesignal amplifier and oscillator applications to500 MHz. Guaranteed 28 Volt, 400 MHz PerformanceOutput Power = 2.0 WattsMinimum Gain = 16 dB2.0 W, to 500 MHzEfficiency = 55% (Typical) TMOS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF156/DAdvance InformationThe RF MOSFET LineMRF156RF Power Field-EffectMRF156RTransistorsMotorola Preferred DeviceNChannel Enhancement Mode MOSFETsDesigned for broadband industrial/commercial applications up to 120 MHz.150 WATTS, 50 VOLTS The high power, high gain and broadband performance of this device m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF154/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MOSFET MRF154Designed primarily for linear largesignal output stages in the 2.0100 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 600 WattsPower Gain = 17 dB (Typ)600 W, 50 V, 80 MHzEff

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/DAdvance InformationThe RF LineMRF15090NPN SiliconRF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz.90 W, 1.5 GHz Specified 26 Volts, 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF154/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MOSFET MRF154Designed primarily for linear largesignal output stages in the 2.0100 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 600 WattsPower Gain = 17 dB (Typ)600 W, 50 V, 80 MHzEff

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF158/DThe RF TMOS LinePower Field Effect TransistorMRF158NChannel Enhancement ModeDesigned for wideband largesignal amplifier and oscillator applications to500 MHz. Guaranteed 28 Volt, 400 MHz PerformanceOutput Power = 2.0 WattsMinimum Gain = 16 dB2.0 W, to 500 MHzEfficiency = 55% (Typical) TMOS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF154/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MOSFET MRF154Designed primarily for linear largesignal output stages in the 2.0100 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 600 WattsPower Gain = 17 dB (Typ)600 W, 50 V, 80 MHzEff

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T

MRF151 Part Status: Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13

MRF158 The Broadband RF TMOS Line M/A-COM Products Released - Rev. 07.07 2W, 500MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications to 500MHz NChannel enhancement mode Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.) Facilitates manual gain co