MRF164W Todos los transistores

 ..1. Size:118K  motorola
 mrf164w.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF164W/D The RF TMOS Line Power Field Effect Transistor N Channel Enhancement Mode MRF164W Designed primarily for wideband large signal output and driver stages to 500 MHz. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 20 W 20 W, to 500 MHz Minimum Gain = 15 dB TMOS Push Pull Configurati

 0.1. Size:118K  motorola
 mrf164wr.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF164W/D The RF TMOS Line Power Field Effect Transistor N Channel Enhancement Mode MRF164W Designed primarily for wideband large signal output and driver stages to 500 MHz. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 20 W 20 W, to 500 MHz Minimum Gain = 15 dB TMOS Push Pull Configurati

 9.1. Size:111K  motorola
 mrf166c.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line RF Power MRF166C Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND Outpu

 9.2. Size:154K  motorola
 mrf166 mrf166c.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line RF Power MRF166 Field Effect Transistors MRF166C N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND

 9.3. Size:108K  motorola
 mrf16030rev3.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 30 Watts NPN SILICON

 9.4. Size:81K  motorola
 mrf16030.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 30 Watts NPN SILICON

 9.5. Size:154K  motorola
 mrf166re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line RF Power MRF166 Field Effect Transistors MRF166C N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND

 9.6. Size:122K  motorola
 mrf160.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF160 Designed primarily for wideband large signal output and driver from 30 500 MHz. Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB 4.0 W, to 400 MHz Efficiency = 50% MOSFET BROADBAND

 9.7. Size:82K  motorola
 mrf16006.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 6.0 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 6 Watts NPN SILICO

 9.8. Size:134K  motorola
 mrf166w.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D The RF MOSFET Line Power Field Effect Transistor MRF166W N Channel Enhancement Mode MOSFET Designed primarily for wideband large signal output and driver stages to 500 MHz. Push Pull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts 40 W,

 9.9. Size:111K  motorola
 mrf166cr.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line RF Power MRF166C Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND Outpu

 9.10. Size:122K  motorola
 mrf160re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF160 Designed primarily for wideband large signal output and driver from 30 500 MHz. Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB 4.0 W, to 400 MHz Efficiency = 50% MOSFET BROADBAND

 9.11. Size:134K  motorola
 mrf166wr.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D The RF MOSFET Line Power Field Effect Transistor MRF166W N Channel Enhancement Mode MOSFET Designed primarily for wideband large signal output and driver stages to 500 MHz. Push Pull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts 40 W,

 9.12. Size:555K  macom
 mrf166c.pdf

MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband large signal output and driver from 30 500MHz. N Channel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc

 9.13. Size:527K  macom
 mrf160.pdf

MRF160 The RF MOSFET Line Broadband Power FET M/A-COM Products Released - Rev. 07.07 4W, to 500MHz, 28V Product Image Designed primarily for wideband large signal output and driver from 30 500 MHz. N Channel enhancement mode MOSFET Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.) Excellent thermal s

 9.14. Size:171K  macom
 mrf16006.pdf

MRF16006 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 6.0W , 1.6GHz, 28V Product Image Designed for 28 V microwave large signal, common base, Class C, CW amplifier applications in the range 1600 1640 MHz. Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40% @