MRF164W Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF164W/DThe RF TMOS LinePower Field Effect TransistorNChannel Enhancement Mode MRF164WDesigned primarily for wideband largesignal output and driver stages to 500MHz. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 20 W20 W, to 500 MHz Minimum Gain = 15 dBTMOS PushPull Configurati

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF164W/DThe RF TMOS LinePower Field Effect TransistorNChannel Enhancement Mode MRF164WDesigned primarily for wideband largesignal output and driver stages to 500MHz. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 20 W20 W, to 500 MHz Minimum Gain = 15 dBTMOS PushPull Configurati

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16006/DThe RF LineMRF16006NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.6.0 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC Characteristics RF POWER TRANSISTOROutput Power = 6 WattsNPN SILICO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,

MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500MHz. NChannel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc

MRF160 The RF MOSFET Line: Broadband Power FET M/A-COM Products Released - Rev. 07.07 4W, to 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500 MHz. NChannel enhancement mode MOSFET Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.) Excellent thermal s

MRF16006 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 6.0W , 1.6GHz, 28V Product Image Designed for 28 V microwave largesignal, common base, Class C, CW amplifier applications in the range 1600 1640 MHz. Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40% @