MRF166W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF166W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 175 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6 VCossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.667 Ohm
Paquete / Cubierta: CASE412-01
Búsqueda de reemplazo de MOSFET MRF166W
MRF166W Datasheet (PDF)
mrf166w.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
mrf166wr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
mrf166c.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
mrf166 mrf166c.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
mrf166re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
mrf166cr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
mrf166c.pdf
MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500MHz. NChannel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc
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