FQD12P10TMF085 Todos los transistores

 4.1. Size:877K  fairchild semi
 fqd12p10tm f085.pdf

February 2010 tm FQD12P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially t

 4.2. Size:666K  fairchild semi
 fqd12p10tf fqd12p10tm.pdf

January 2009 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been espec

 6.1. Size:2919K  kexin
 fqd12p10.pdf

SMD Type MOSFET P-Channel MOSFET FQD12P10 (KQD12P10) TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V) D RDS(ON) 290m (VGS =-10V) 0.127 +0.1 0.80-0.1 max Low gate charge Low Crss + 0.1 Fast switching 2.3 0.60- 0.1 G +0.15 4 .60 -0.15 S Absolute Maximu

 6.2. Size:777K  cn vbsemi
 fqd12p10.pdf

FQD12P10 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switch