Справочник MOSFET. FQD12P10TMF085

 

FQD12P10TMF085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD12P10TMF085
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: TO252 DPAK

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FQD12P10TMF085 Datasheet (PDF)

 4.1. Size:877K  fairchild semi
 fqd12p10tm f085.pdf

FQD12P10TMF085 FQD12P10TMF085

February 2010tmFQD12P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially t

 4.2. Size:666K  fairchild semi
 fqd12p10tf fqd12p10tm.pdf

FQD12P10TMF085 FQD12P10TMF085

January 2009QFETFQD12P10 / FQU12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been espec

 6.1. Size:2919K  kexin
 fqd12p10.pdf

FQD12P10TMF085 FQD12P10TMF085

SMD Type MOSFETP-Channel MOSFETFQD12P10 (KQD12P10)TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V)D RDS(ON) 290m (VGS =-10V)0.127+0.10.80-0.1max Low gate charge Low Crss+ 0.1 Fast switching 2.3 0.60- 0.1G+0.154 .60 -0.15S Absolute Maximu

 6.2. Size:777K  cn vbsemi
 fqd12p10.pdf

FQD12P10TMF085 FQD12P10TMF085

FQD12P10www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

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