MRF173CQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF173CQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5556 Ohm
Encapsulados: CASE211-11
Búsqueda de reemplazo de MRF173CQ MOSFET
- Selecciónⓘ de transistores por parámetros
MRF173CQ datasheet
mrf173 mrf173cq.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
mrf173.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
mrf173re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
mrf173rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
Otros transistores... MRF158, MRF160, MRF164W, MRF166, MRF166C, MRF166W, MRF171, MRF173, IRF530, MRF174, MRF175GU, MRF175GV, MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177
History: FQI17N08TU
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c
