MRF173CQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF173CQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6 VCossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5556 Ohm
Paquete / Cubierta: CASE211-11
MRF173CQ Datasheet (PDF)
mrf173 mrf173cq.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM
mrf173.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast
mrf173re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast
mrf173rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 15N10 | LSD55R140GF | CHM13N07PAGP | KF1N60I | HEPF2007A | SIA907EDJT | VS-FC220SA20
History: 15N10 | LSD55R140GF | CHM13N07PAGP | KF1N60I | HEPF2007A | SIA907EDJT | VS-FC220SA20
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