MRF173CQ. Аналоги и основные параметры
Наименование производителя: MRF173CQ
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 105 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5556 Ohm
Тип корпуса: CASE211-11
Аналог (замена) для MRF173CQ
- подборⓘ MOSFET транзистора по параметрам
MRF173CQ даташит
mrf173 mrf173cq.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
mrf173.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
mrf173re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
mrf173rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
Другие IGBT... MRF158, MRF160, MRF164W, MRF166, MRF166C, MRF166W, MRF171, MRF173, IRF530, MRF174, MRF175GU, MRF175GV, MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177
History: PP9H06BV | IRF6722M | MTNK1N3
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c





