MRF175LV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF175LV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 270 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 40 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 6 V
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
Paquete / Cubierta: CASE333-04
Búsqueda de reemplazo de MOSFET MRF175LV
MRF175LV Datasheet (PDF)
mrf175lu mrf175lv.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
mrf175lurev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
mrf175lu.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st
mrf175l .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
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