MRF175LV datasheet, аналоги, основные параметры
Наименование производителя: MRF175LV 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: CASE333-04
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Аналог (замена) для MRF175LV
- подборⓘ MOSFET транзистора по параметрам
MRF175LV даташит
mrf175lu mrf175lv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
mrf175lurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
mrf175lu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st
mrf175l .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
Другие IGBT... MRF166W, MRF171, MRF173, MRF173CQ, MRF174, MRF175GU, MRF175GV, MRF175LU, NCEP15T14, MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, MRF275G, MRF5003
Параметры MOSFET. Взаимосвязь и компромиссы
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