MRF176GU Todos los transistores

 

MRF176GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF176GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 400 W
   Voltaje máximo drenador - fuente |Vds|: 125 V
   Voltaje máximo fuente - puerta |Vgs|: 40 V
   Corriente continua de drenaje |Id|: 16 A
   Temperatura máxima de unión (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 110 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: CASE375-04

 Búsqueda de reemplazo de MOSFET MRF176GU

 

MRF176GU Datasheet (PDF)

 ..1. Size:195K  motorola
mrf176gu.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 ..2. Size:195K  motorola
mrf176gu mrf176gv.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 0.1. Size:177K  motorola
mrf176gurev8.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 9.1. Size:138K  motorola
mrf175lurev8.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 9.2. Size:183K  motorola
mrf175gu.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 9.3. Size:168K  motorola
mrf174rev7.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

 9.4. Size:172K  motorola
mrf171re.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF171/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF171. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 45 WattsMinimum Gain = 12 dB45 W, to 200 MHzEfficie

 9.5. Size:191K  motorola
mrf177re.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 9.6. Size:156K  motorola
mrf175lu.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

 9.7. Size:158K  motorola
mrf175l .pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 9.8. Size:186K  motorola
mrf177rev8.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 9.9. Size:123K  motorola
mrf173.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast

 9.10. Size:186K  motorola
mrf177.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 9.11. Size:173K  motorola
mrf174re.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

 9.12. Size:158K  motorola
mrf175lu mrf175lv.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 9.13. Size:107K  motorola
mrf173 mrf173cq.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM

 9.14. Size:123K  motorola
mrf173re.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast

 9.15. Size:172K  motorola
mrf171.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF171/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF171. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 45 WattsMinimum Gain = 12 dB45 W, to 200 MHzEfficie

 9.16. Size:183K  motorola
mrf175gu mrf175gv.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 9.17. Size:173K  motorola
mrf174.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

 9.18. Size:107K  motorola
mrf173rev8.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM

 9.19. Size:191K  motorola
mrf177 mrf177m.pdf

MRF176GU
MRF176GU

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 9.20. Size:337K  macom
mrf173.pdf

MRF176GU
MRF176GU

MRF173 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 80W, 175MHz, 28V Designed for broadband commercial and military applications up to Product Image 200 MHz frequency range. The highpower, highgain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. NChannel enhancement mode MOS

 9.21. Size:432K  macom
mrf177.pdf

MRF176GU
MRF176GU

MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in pushpull configurations. Can be used in manual gain control, ALC and modulation circuits. NChannel enhancement mode MOSFET Typi

 9.22. Size:466K  macom
mrf171a.pdf

MRF176GU
MRF176GU

MRF171A The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 45W, 150MHz, 28V Designed primarily for wideband largesignal output and driver stages from Product Image 30200 MHz. NChannel enhancement mode MOSFET Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stabilit

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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