MRF176GU Datasheet. Specs and Replacement
Type Designator: MRF176GU 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: CASE375-04
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MRF176GU datasheet
..1. Size:195K motorola
mrf176gu.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra... See More ⇒
..2. Size:195K motorola
mrf176gu mrf176gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra... See More ⇒
0.1. Size:177K motorola
mrf176gurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra... See More ⇒
9.1. Size:138K motorola
mrf175lurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr... See More ⇒
9.2. Size:183K motorola
mrf175gu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra... See More ⇒
9.3. Size:168K motorola
mrf174rev7.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi... See More ⇒
9.4. Size:172K motorola
mrf171re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie... See More ⇒
9.5. Size:191K motorola
mrf177re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a... See More ⇒
9.6. Size:156K motorola
mrf175lu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st... See More ⇒
9.7. Size:158K motorola
mrf175l .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr... See More ⇒
9.8. Size:186K motorola
mrf177rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b... See More ⇒
9.9. Size:123K motorola
mrf173.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast... See More ⇒
9.10. Size:186K motorola
mrf177.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b... See More ⇒
9.11. Size:173K motorola
mrf174re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi... See More ⇒
9.12. Size:158K motorola
mrf175lu mrf175lv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr... See More ⇒
9.13. Size:107K motorola
mrf173 mrf173cq.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM... See More ⇒
9.14. Size:123K motorola
mrf173re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast... See More ⇒
9.15. Size:172K motorola
mrf171.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie... See More ⇒
9.16. Size:183K motorola
mrf175gu mrf175gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra... See More ⇒
9.17. Size:173K motorola
mrf174.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi... See More ⇒
9.18. Size:107K motorola
mrf173rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM... See More ⇒
9.19. Size:191K motorola
mrf177 mrf177m.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a... See More ⇒
9.20. Size:337K macom
mrf173.pdf
MRF173 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 80W, 175MHz, 28V Designed for broadband commercial and military applications up to Product Image 200 MHz frequency range. The high power, high gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N Channel enhancement mode MOS... See More ⇒
9.21. Size:432K macom
mrf177.pdf
MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in push pull configurations. Can be used in manual gain control, ALC and modulation circuits. N Channel enhancement mode MOSFET Typi... See More ⇒
9.22. Size:466K macom
mrf171a.pdf
MRF171A The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 45W, 150MHz, 28V Designed primarily for wideband large signal output and driver stages from Product Image 30 200 MHz. N Channel enhancement mode MOSFET Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stabilit... See More ⇒
Detailed specifications: MRF171, MRF173, MRF173CQ, MRF174, MRF175GU, MRF175GV, MRF175LU, MRF175LV, STP80NF70, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, MRF275G, MRF5003, MRF5007
Keywords - MRF176GU MOSFET specs
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