MRF5007 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF5007  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.111 Ohm

Encapsulados: CASE430B-01

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MRF5007 datasheet

 ..1. Size:161K  motorola
 mrf5007 mrf5007r1.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

 ..2. Size:158K  motorola
 mrf5007.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

 0.1. Size:161K  motorola
 mrf5007rev2.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

 0.2. Size:158K  motorola
 mrf5007r.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

MOSTRAR MÁS

Otros transistores... MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, MRF275G, MRF5003, TK10A60D, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2, BR2N7002LK2