MRF5007 Todos los transistores

 

MRF5007 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF5007
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.111 Ohm
   Paquete / Cubierta: CASE430B-01
 

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Principales características: MRF5007

 ..1. Size:161K  motorola
mrf5007 mrf5007r1.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

 ..2. Size:158K  motorola
mrf5007.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

 0.1. Size:161K  motorola
mrf5007rev2.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

 0.2. Size:158K  motorola
mrf5007r.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

Otros transistores... MRF176GU , MRF176GV , MRF177 , MRF177M , MRF184 , MRF184S , MRF275G , MRF5003 , 5N60 , MRF5007R1 , MRF5015 , MRF5035 , 2N7002K1 , BR10N60 , BR20N50 , BR2N7002AK2 , BR2N7002LK2 .

 

 
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