MRF5007 Todos los transistores

 

MRF5007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF5007
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.111 Ohm
   Paquete / Cubierta: CASE430B-01
     - Selección de transistores por parámetros

 

MRF5007 Datasheet (PDF)

 ..1. Size:161K  motorola
mrf5007 mrf5007r1.pdf pdf_icon

MRF5007

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 ..2. Size:158K  motorola
mrf5007.pdf pdf_icon

MRF5007

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

 0.1. Size:161K  motorola
mrf5007rev2.pdf pdf_icon

MRF5007

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 0.2. Size:158K  motorola
mrf5007r.pdf pdf_icon

MRF5007

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

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History: NTMFS4841NT1G | AK5N65S | SSW65R065SFD3 | 1N65L-T60-K | NTB30N06L | IRHMK57260SE | AP2762R-A-HF

 

 
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