MRF5007 Datasheet. Specs and Replacement

Type Designator: MRF5007  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.111 Ohm

Package: CASE430B-01

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MRF5007 datasheet

 ..1. Size:161K  motorola
 mrf5007 mrf5007r1.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒

 ..2. Size:158K  motorola
 mrf5007.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒

 0.1. Size:161K  motorola
 mrf5007rev2.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒

 0.2. Size:158K  motorola
 mrf5007r.pdf pdf_icon

MRF5007

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒

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Detailed specifications: MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, MRF275G, MRF5003, TK10A60D, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2, BR2N7002LK2

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